Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
V GS = 0 V, I D = -250 μA
I D = -250 μA, Referenced to 25 o C
V DS = -20 V, V GS = 0 V
T J = 55°C
V GS = -8 V, V DS = 0 V
-25
-22
-1
-10
-100
V
mV / o C
μA
μA
nA
ON CHARACTERISTICS
(Note 2)
? V GS(th) / ? T J
Gate Threshold Voltage Temp. Coefficient
I D = -250 μA, Referenced to 25 o C
2.1
mV / o C
V GS(th)
R DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS = V GS , I D = -250 μA
V GS = -2.7 V, I D = -0.25 A
-0.65
-0.86
1.22
-1.5
1.5
V
?
V GS = -4.5 V, I D = -0.5 A
T J =125°C
0.87
1.21
1.1
2
I D(ON)
On-State Drain Current
V GS = -2.7 V, V DS = -5 V
-0.5
A
V GS = -4.5 V, V DS = -5 V
-1
g FS
Forward Transconductance
V DS = -5 V, I D = -0.5 A
0.8
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
62
35
9.5
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -6 V, I D = -0.5 A,
V GS = -4.5 V, R GEN = 50 ?
V DS = -5 V, I D = - 0.25 A,
V GS = -4.5 V
7
8
55
35
1.1
0.32
0.28
20
20
110
70
1.5
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.5
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -0.5 A
(Note 2)
-0.88
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
a. 140 O C/W on a 0.125 in 2 pad of
2oz copper.
b. 180 O C/W on a 0.005 in 2 of pad
of 2oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6304P Rev.D
相关PDF资料
FDC6305N MOSFET N-CHAN DUAL 20V SSOT6
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相关代理商/技术参数
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